Photonic-Electronic Modulated a-IGZO Synaptic Transistor with High Linearity Conductance Modulation and Energy-Efficient Multimodal Learning.

Brain-inspired neuromorphic computing is expected to overcome the von Neumann bottleneck by eliminating the memory wall between processing and memory units. Nevertheless, critical challenges persist in synaptic device implementation, particularly regarding nonlinear/asymmetric conductance modulation and multilevel conductance states, which substantially impede the realization of high-performance neuromorphic hardware. This study demonstrates a novel advancement in photonic-electronic modulated synaptic devices through the development of an amorphous indium-gallium-zinc oxide (a-IGZO) synaptic transistor. The device demonstrates biological synaptic functionalities, including excitatory/inhibitory post-synaptic currents (EPSCs/IPSCs) and spike-timing-dependent plasticity, while achieving excellent conductance modulation characteristics (nonlinearity of 0.0095/-0.0115 and asymmetric ratio of 0.247) and successfully implementing Pavlovian associative learning paradigms. Notably, systematic neural network simulations employing the experimental parameters reveal a 93.8% recognition accuracy on the MNIST handwritten digit dataset. The a-IGZO synaptic transistor with photonic-electronic co-modulation serves as a potential critical building block for constructing neuromorphic architectures with human-brain efficiency.