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磁性VSe单分子层的本征谷极化

Intrinsic valley polarization of magnetic VSe monolayers.

作者信息

Liu Jian, Hou Wen-Jie, Cheng Cai, Fu Hui-Xia, Sun Jia-Tao, Meng Sheng

机构信息

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.

出版信息

J Phys Condens Matter. 2017 Jun 28;29(25):255501. doi: 10.1088/1361-648X/aa6e6e. Epub 2017 May 18.

Abstract

Intrinsic valley polarization can be obtained in VSe monolayers with broken inversion symmetry and time reversal symmetry. First-principles investigations reveal that the magnitude of the valley splitting in magnetic VSe induced by spin-orbit coupling reaches as high as 78.2 meV and can be linearly tuned by biaxial strain. Besides conventional polarized light, hole doping or illumination with light of proper frequency can offer effective routes to realize valley polarization. Moreover, spin-orbit coupling in monolayer VSe breaks not only the valley degeneracy but also the three-fold rotational symmetry in band structure. The intrinsic and tunable valley splitting and the breaking of optical isotropy bring additional benefits to valleytronic and optoelectronic applications.

摘要

在具有反演对称性和时间反演对称性破缺的VSe单层中可以获得本征谷极化。第一性原理研究表明,自旋轨道耦合在磁性VSe中引起的谷分裂幅度高达78.2毫电子伏特,并且可以通过双轴应变进行线性调节。除了传统的偏振光之外,空穴掺杂或用适当频率的光照射可以提供实现谷极化的有效途径。此外,单层VSe中的自旋轨道耦合不仅打破了谷简并性,还打破了能带结构中的三重旋转对称性。本征且可调的谷分裂以及光学各向同性的打破为谷电子学和光电子学应用带来了额外的好处。

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