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ZrSiS 中的热电量子振荡。

Thermoelectric quantum oscillations in ZrSiS.

机构信息

Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PO Box 1490, 50-950 Wrocław, Poland.

Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 OHE, UK.

出版信息

Nat Commun. 2017 May 23;8:15219. doi: 10.1038/ncomms15219.

Abstract

Topological semimetals are systems in which conduction and valence bands cross each other and the crossings are protected by topological constraints. These materials provide intriguing tests for fundamental theories, while their unique physical properties promise a wide range of possible applications in low-power spintronics, optoelectronics, quantum computing and green energy harvesting. Here we report our study of the thermoelectric power of single-crystalline ZrSiS that is believed to be a topological nodal-line semimetal. We show that the thermoelectric power is an extremely sensitive probe of multiple quantum oscillations that are visible in ZrSiS at temperatures as high as 100 K. Two of these oscillations are shown to arise from three- and two-dimensional electronic bands, each with linear dispersion and the additional Berry phase predicted theoretically for materials with non-trivial topology. Our work not only provides further information on ZrSiS but also suggests a different route for studying other topological semimetals.

摘要

拓扑半金属是一种导带和价带交叉且交叉受拓扑约束保护的系统。这些材料为基础理论提供了有趣的测试,而其独特的物理性质有望在低功耗自旋电子学、光电学、量子计算和绿色能源收集等领域得到广泛应用。在这里,我们报告了对单晶体 ZrSiS 的热电势的研究,该晶体被认为是一种拓扑节线半金属。我们表明,热电势是探测多量子振荡的极其敏感的探针,在高达 100 K 的温度下,ZrSiS 中可以看到这些多量子振荡。其中两个振荡被证明来自三维和二维电子能带,每个能带都具有线性色散,以及对于具有非平凡拓扑的材料理论上预测的附加 Berry 相。我们的工作不仅提供了关于 ZrSiS 的进一步信息,而且还为研究其他拓扑半金属提供了一条不同的途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3a68/5529674/13972921ba83/ncomms15219-f1.jpg

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