Lin Gong-Ru, Su Sheng-Pin, Wu Chung-Lun, Lin Yung-Hsiang, Huang Bo-Ji, Wang Huai-Yung, Tsai Cheng-Ting, Wu Chih-I, Chi Yu-Chieh
Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University (NTU), No.1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China.
Sci Rep. 2015 Apr 29;5:9611. doi: 10.1038/srep09611.
Silicon photonic interconnection on chip is the emerging issue for next-generation integrated circuits. With the Si-rich SiNx micro-ring based optical Kerr switch, we demonstrate for the first time the wavelength and format conversion of optical on-off-keying data with a bit-rate of 12 Gbit/s. The field-resonant nonlinear Kerr effect enhances the transient refractive index change when coupling the optical data-stream into the micro-ring through the bus waveguide. This effectively red-shifts the notched dip wavelength to cause the format preserved or inversed conversion of data carried by the on-resonant or off-resonant probe, respectively. The Si quantum dots doped Si-rich SiNx strengthens its nonlinear Kerr coefficient by two-orders of magnitude higher than that of bulk Si or Si3N4. The wavelength-converted and cross-amplitude-modulated probe data-stream at up to 12-Gbit/s through the Si-rich SiNx micro-ring with penalty of -7 dB on transmission has shown very promising applicability to all-optical communication networks.
片上硅光子互连是下一代集成电路的新兴课题。利用基于富硅SiNx微环的光学克尔开关,我们首次演示了比特率为12 Gbit/s的光开关键控数据的波长和格式转换。当通过总线波导将光数据流耦合到微环中时,场共振非线性克尔效应增强了瞬态折射率变化。这有效地使陷波波长红移,从而分别导致由共振或非共振探针携带的数据的格式保持或反转转换。掺杂硅量子点的富硅SiNx的非线性克尔系数比块状硅或Si3N4高两个数量级。通过富硅SiNx微环实现了高达12 Gbit/s的波长转换和交叉幅度调制探针数据流,传输损耗为-7 dB,这对全光通信网络显示出非常有前景的适用性。