Department of Chemical & Biomolecular Engineering, University of Houston, Houston, TX 77204, USA.
Center for Integrated Bio & Nano Systems, University of Houston, Houston, TX 77204, USA.
Sensors (Basel). 2017 Jun 6;17(6):1296. doi: 10.3390/s17061296.
Ta/Ru/Co/Ru/Co/Cu/Co/NiFe/Ta spin-valve giant magnetoresistive (GMR) multilayers were deposited using UHV magnetron sputtering and optimized to achieve a 13% GMR ratio before patterning. The GMR multilayer was patterned into 12 sensor arrays using a combination of e-beam and optical lithographies. Arrays were constructed with 400 nm × 400 nm and 400 nm × 200 nm sensors for the detection of reporter nanoparticles. Nanoparticle detection was based on measuring the shift in high-to-low resistance switching field of the GMR sensors in the presence of magnetic particle(s). Due to shape anisotropy and the corresponding demag field, the resistance state switching fields were significantly larger and the switching field distribution significantly broader in the 400 nm × 200 nm sensors as compared to the 400 nm × 400 nm sensors. Thus, sensor arrays with 400 nm × 400 nm dimensions were used for the demonstration of particle detection. Detection of a single 225 nm Fe₃O₄ magnetic nanoparticle and a small number (~10) of 100 nm nanoparticles was demonstrated. With appropriate functionalization for biomolecular recognition, submicron GMR sensor arrays can serve as the basis of ultrasensitive chemical and biological sensors.
Ta/Ru/Co/Ru/Co/Cu/Co/NiFe/Ta 自旋阀巨磁电阻 (GMR) 多层膜采用超高真空磁控溅射沉积,并在进行图案化之前对其进行优化以实现 13%的 GMR 比。GMR 多层膜采用电子束和光学光刻相结合的方法,图案化成 12 个传感器阵列。传感器阵列由 400nm×400nm 和 400nm×200nm 的传感器组成,用于检测报告纳米粒子。纳米粒子检测基于测量 GMR 传感器在存在磁性粒子的情况下高阻态到低阻态的电阻转换磁场的变化。由于形状各向异性和相应的退磁场,与 400nm×400nm 传感器相比,400nm×200nm 传感器的电阻状态转换磁场显著更大,转换磁场分布显著更宽。因此,使用 400nm×400nm 尺寸的传感器阵列来演示粒子检测。演示了单个 225nmFe₃O₄ 磁性纳米粒子和少量(约 10 个)100nm 纳米粒子的检测。通过适当的生物分子识别功能化,亚微米 GMR 传感器阵列可以作为超灵敏化学和生物传感器的基础。