Department of Materials Science and Engineering, National Cheng Kung University, Tainan city, 70101, Taiwan.
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan city, 70101, Taiwan.
Sci Rep. 2017 Jun 8;7(1):3082. doi: 10.1038/s41598-017-03324-5.
The electromigration (EM) effect involves atomic diffusion of metals under current stressing. Recent theories of EM are based on the unbalanced electrostatic and electron-wind forces exerted on metal ions. However, none of these models have coupled the EM effect and lattice stability. Here, we performed in situ current-stressing experiments for pure Cu strips using synchrotron X-ray diffractometry and scanning electron microscopy and ab initio calculations based on density functional theory. An intrinsic and non-uniform lattice expansion - larger at the cathode and smaller at the anode, is identified induced by the flow of electrons. If this electron flow-induced strain is small, it causes an elastic deformation; while if it is larger than the yield point, diffusion as local stress relaxation will cause the formation of hillocks and voids as well as EM-induced failure. The fundamental driving force for the electromigration effect is elucidated and validated with experiments.
电迁移(EM)效应涉及在电流应力下金属原子的扩散。最近的 EM 理论基于对金属离子施加的不平衡静电和电子风的力。然而,这些模型都没有将 EM 效应和晶格稳定性结合起来。在这里,我们使用同步加速器 X 射线衍射仪和扫描电子显微镜以及基于密度泛函理论的从头算计算对纯 Cu 条进行了原位电流加应力实验。确定了由电子流引起的固有和不均匀的晶格膨胀 - 在阴极处更大,在阳极处更小。如果这种电子流引起的应变很小,则会导致弹性变形;而如果它大于屈服点,则扩散作为局部应力松弛会导致形成晶须和空隙以及 EM 诱导的失效。用实验阐明并验证了电迁移效应的基本驱动力。