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半无限金属-电介质超晶格中的 Tamm 等离子体模式。

Tamm plasmon modes on semi-infinite metallodielectric superlattices.

机构信息

Institute of Physics Belgrade, Center for Solid State Physics and New Materials, University of Belgrade, Belgrade, 11080, Serbia.

Institute of Chemistry, Technology and Metallurgy, Center Of Microelectronic Technologies, University of Belgrade, Belgrade, 11000, Serbia.

出版信息

Sci Rep. 2017 Jun 16;7(1):3746. doi: 10.1038/s41598-017-03497-z.

Abstract

We analyze the fundamental properties of optical waves referred to as Tamm plasmon modes (TPMs) which are tied to the interface of a semi-infinite two-phase metallodielectric superlattice with an arbitrary homogeneous capping medium. Such modes offer new ways of achieving high electromagnetic field localization and spontaneous emission enhancement in the vicinity of the interface in conjunction with absorption loss management, which is crucial for future applications. The homointerface, formed when the capping medium has the same permittivity as one of the superlattice constituents, is found to support a TPM whose dispersion overlaps the single-interface surface plasmon polariton (SPP) dispersion but which has a cut off at the topological transition point. In contrast, a heterointerface formed for an arbitrary capping medium, is found to support multiple TPMs whose origin can be traced by considering the interaction between a single-interface SPP and the homointerface TPM burried under the top layer of the superlattice. By carrying out a systematic comparison between TPMs and single-interface SPPs, we find that the deviations are most pronounced in the vicinity of the transition frequency for superlattices in which dielectric layers are thicker than metallic ones.

摘要

我们分析了与半无限双相金属-电介质超晶格与任意均匀盖帽介质的界面相关的光学波的基本特性,这些光学波被称为 Tamm 等离子体模式(TPM)。这些模式提供了在界面附近实现高电磁场局域和自发辐射增强的新方法,同时结合吸收损耗管理,这对于未来的应用至关重要。当盖帽介质的介电常数与超晶格成分之一相同时,形成同界面,该界面支持 TPM,其色散与单界面表面等离激元极化激元(SPP)色散重叠,但在拓扑相变点处截止。相比之下,对于任意盖帽介质形成的异质界面,支持多个 TPM,其起源可以通过考虑单界面 SPP 与埋藏在超晶格顶层下的同界面 TPM 之间的相互作用来追踪。通过对 TPM 和单界面 SPP 进行系统比较,我们发现,在介电层比金属层厚的超晶格的过渡频率附近,偏差最为明显。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/32f0/5473927/838ce378e027/41598_2017_3497_Fig1_HTML.jpg

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