Kim Hee-Dong, Yun Min Ju, Lee Jae Hoon, Kim Kyoeng Heon, Kim Tae Geun
School of Electrical Engineering, Korea University, Anam-dong 5-ga, Sungbuk-gu, Seoul 136-701, Republic of Korea.
Sci Rep. 2014 Apr 9;4:4614. doi: 10.1038/srep04614.
A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to 7 V. In the reliability test, the device exhibited a good endurance of over 10(5) cycles and a long data retention of over 10(5) s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.
通过浸涂法成功实现了一种基于还原氧化石墨烯（RGO）的具有多级电阻开关（RS）的透明电子存储单元。使用ITO/RGO/ITO结构，该存储器件在可见光区域（包括基板）的透过率高于80%，并且通过将脉冲高度从2 V变化到7 V，在00、01、10和11状态下呈现出多级RS行为。在可靠性测试中，该器件在每种状态下均表现出超过10⁵ 次循环的良好耐久性以及在85°C下超过10⁵ s的长数据保持能力。我们认为，这项工作中提出的基于RGO的透明存储器可能会成为未来透明电子器件的一个里程碑。
