Hutagalung Sabar D, Fadhali Mohammed M, Areshi Raed A, Tan Fui D
Physics Department, Faculty of Science, Jazan University, Jazan, Saudi Arabia.
Physics Department, Faculty of Science, Ibb University, Ibb, Yemen.
Nanoscale Res Lett. 2017 Dec;12(1):425. doi: 10.1186/s11671-017-2197-3. Epub 2017 Jun 24.
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I-V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
通过在HF/AgNO中对n型硅（100）晶片进行化学蚀刻来制备硅纳米线（SiNWs）。在硅衬底上形成垂直排列且高密度的SiNWs。观察到各种形状的SiNWs，包括圆形、矩形和三角形。记录的SiNWs的最大反射率约为19.2%，远低于硅衬底的反射率（65.1%）。SiNWs在近紫外区域的最小反射率约为3.5%，在可见光到近红外区域为9.8%。发现SiNWs的计算带隙能量略高于硅衬底。独立SiNW的I-V特性在正向偏压高达2.0 V时表现出线性欧姆行为。SiNW的平均电阻率约为33.94Ω·cm。
