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基于几何限制横向晶体生长的晶圆级单晶钙钛矿图案化薄膜。

Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth.

机构信息

Department of Chemistry, Hanyang University, Seoul 04763, Korea.

Department of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of Korea.

出版信息

Nat Commun. 2017 Jul 10;8:15882. doi: 10.1038/ncomms15882.

Abstract

We report a facile roll-printing method, geometrically confined lateral crystal growth, for the fabrication of large-scale, single-crystal CHNHPbI perovskite thin films. Geometrically confined lateral crystal growth is based on transfer of a perovskite ink solution via a patterned rolling mould to a heated substrate, where the solution crystallizes instantly with the immediate evaporation of the solvent. The striking feature of this method is that the instant crystallization of the feeding solution under geometrical confinement leads to the unidirectional lateral growth of single-crystal perovskites. Here, we fabricated single-crystal perovskites in the form of a patterned thin film (3 × 3 inch) with a high carrier mobility of 45.64 cm V s. We also used these single-crystal perovskite thin films to construct solar cells with a lateral configuration. Their active-area power conversion efficiency shows a highest value of 4.83%, which exceeds the literature efficiency values of lateral perovskite solar cells.

摘要

我们报告了一种简便的辊压印刷方法,即几何限制的横向晶体生长,用于制造大规模的单晶 CHNHPbI 钙钛矿薄膜。几何限制的横向晶体生长基于通过图案化的滚动模具将钙钛矿油墨溶液转移到加热的基底上,在基底上,溶液在溶剂立即蒸发的同时立即结晶。该方法的显著特点是,进料溶液在几何限制下的瞬间结晶导致单晶钙钛矿的单向横向生长。在这里,我们以图案化薄膜(3×3 英寸)的形式制造了单晶钙钛矿,其载流子迁移率高达 45.64 cm V s。我们还使用这些单晶钙钛矿薄膜构建了具有横向结构的太阳能电池。它们的活性区域功率转换效率达到了 4.83%的最高值,超过了横向钙钛矿太阳能电池的文献效率值。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ef55/5508126/9337485fc359/ncomms15882-f1.jpg

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