Grange T, Somaschi N, Antón C, De Santis L, Coppola G, Giesz V, Lemaître A, Sagnes I, Auffèves A, Senellart P
Université Grenoble Alpes, F-38000 Grenoble, France.
Centre National de la Recherche Scientifique, Institut Néel, Nanophysique et Semiconducteurs Group, F-38000 Grenoble, France.
Phys Rev Lett. 2017 Jun 23;118(25):253602. doi: 10.1103/PhysRevLett.118.253602.
Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduce the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero-phonon line with indistinguishabilities above 97% up to 18 K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from 87% (24%) without cavity effect to more than 99% (76%) at 0K (20K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.
固态发射器是开发单光子集成源的理想选择。然而,声子会通过零声子线的纯退相以及声子辅助发射来降低光子的不可区分性。在此,我们从理论和实验两方面研究了微腔中半导体量子点发射的光子的不可区分性与温度的函数关系。我们表明,与高品质因子腔的强耦合可以同时降低声子诱导的两种退相干源的影响。它首先限制了纯退相对零声子线的影响,在高达18K的温度下,不可区分性超过97%。此外,它有效地将声子边带重定向到零声子线,并使全发射光谱的不可区分性从无腔效应时的87%(24%)在0K(20K)时提高到超过99%(76%)。我们提供了优化腔设计的指导方针,以进一步最小化声子诱导的退相干。