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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate.

作者信息

Wu YewChung Sermon, Isabel A Panimaya Selvi, Zheng Jian-Hsuan, Lin Bo-Wen, Li Jhen-Hong, Lin Chia-Chen

机构信息

Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan.

出版信息

Materials (Basel). 2015 Apr 22;8(4):1993-1999. doi: 10.3390/ma8041993.

DOI:10.3390/ma8041993
PMID:28788044
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5507034/
Abstract

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.

摘要
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/846594b97687/materials-08-01993-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/c6190448cf50/materials-08-01993-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/e1c7669ce5b9/materials-08-01993-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/f7a33a787a50/materials-08-01993-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/53185d81bd42/materials-08-01993-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/846594b97687/materials-08-01993-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/c6190448cf50/materials-08-01993-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/e1c7669ce5b9/materials-08-01993-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/f7a33a787a50/materials-08-01993-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/53185d81bd42/materials-08-01993-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5f8/5507034/846594b97687/materials-08-01993-g005.jpg

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本文引用的文献

1
Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.利用纳米压印光刻技术提高具有纳米粗糙表面的绿色发光二极管氮化物基功率芯片的光输出。
Nanotechnology. 2008 May 7;19(18):185301. doi: 10.1088/0957-4484/19/18/185301. Epub 2008 Apr 1.
2
Analysis of position-dependent light extraction of GaN-based LEDs.
Opt Express. 2005 May 30;13(11):4175-9. doi: 10.1364/opex.13.004175.