Yu Huabin, Jia Hongfeng, Liu Zhongling, Memon Muhammad Hunain, Tian Meng, Fang Shi, Wang Danhao, Zhang Haochen, Liu Jianzhe, Xu Liang, Yang Tianpeng, Wei Long, Liao Zhaoliang, Sun Haiding
Opt Lett. 2021 Nov 1;46(21):5356-5359. doi: 10.1364/OL.441300.
A hybrid patterned sapphire substrate (HPSS) aiming to achieve high-quality Al(Ga)N epilayers for the development of GaN-based ultraviolet light-emitting diodes (UV LEDs) has been prepared. The high-resolution X-ray diffraction measurements reveal that the Al(Ga)N epilayers grown on a HPSS and conventional patterned sapphire substrate (CPSS) have similar structural quality. More importantly, benefiting from the larger refractive index contrast between the patterned silica array and sapphire, the photons can escape from the hybrid substrate with an improved transmittance in the UV band. As a result, in comparison with the UV LEDs grown on the CPSS, the LEDs grown on the HPSS exhibit a significantly enhanced light output power by 14.5% and more than 22.9% higher peak external quantum efficiency, owing to the boost of the light extraction efficiency from the adoption of the HPSS which can be used as a promising substrate to realize high-efficiency and high-power UV LEDs of the future.
一种旨在为基于氮化镓的紫外发光二极管（UV LED）的发展制备高质量铝（镓）氮外延层的混合图案蓝宝石衬底（HPSS）已被制备出来。高分辨率X射线衍射测量结果表明，在HPSS和传统图案蓝宝石衬底（CPSS）上生长的铝（镓）氮外延层具有相似的结构质量。更重要的是，得益于图案化二氧化硅阵列与蓝宝石之间更大的折射率对比度，光子能够以提高的紫外波段透过率从混合衬底中逸出。结果，与在CPSS上生长的UV LED相比，在HPSS上生长的LED表现出显著增强的光输出功率，提高了14.5%，峰值外部量子效率高出22.9%以上，这归因于采用HPSS提高了光提取效率，HPSS可作为一种有前景的衬底来实现未来的高效高功率UV LED。
