Martini F, Gaggero A, Mattioli F, Leoni R
Opt Express. 2019 Oct 14;27(21):29669-29675. doi: 10.1364/OE.27.029669.
Silicon carbide (SiC) is among the most promising optical materials for the realization of classical and quantum photonics, due to the simultaneous presence of quantum emitters and a non-centrosymmetric crystal structure. In recent years, progress have been made in the development of SiC integrated optical components making this a mature platform for the implementation of quantum experiments on chip. Toward this scope, the fabrication of a single photon detector that can be implemented on top of a photonic circuit is essential to achieve a monolithic integration of all the fundamental building blocks required for photonic quantum technologies. Here we demonstrate for the first time single photon detection with superconducting nanowires on top of a bare 3C SiC layer using a novel approach for the fiber-to-detector coupling that allows the optical characterization of multiple detectors without the use of neither cryogenic positioners nor the micromachining of the substrate.
碳化硅(SiC)是实现经典和量子光子学最有前景的光学材料之一,这是因为它同时具备量子发射器和非中心对称晶体结构。近年来,碳化硅集成光学组件的开发取得了进展,使其成为在芯片上进行量子实验的成熟平台。为了实现这一目标,制造一种可在光子电路顶部实现的单光子探测器对于实现光子量子技术所需的所有基本组件的单片集成至关重要。在这里,我们首次展示了在裸3C SiC层顶部使用超导纳米线进行单光子探测,采用了一种新颖的光纤到探测器耦合方法,该方法无需使用低温定位器或对衬底进行微加工就能对多个探测器进行光学表征。