Myzaferi Anisa, Reading Arthur H, Farrell Robert M, Cohen Daniel A, Nakamura Shuji, DenBaars Steven P
Opt Express. 2017 Jul 24;25(15):16922-16930. doi: 10.1364/OE.25.016922.
Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.
将透明导电氧化物（TCO）顶部包层集成到III族氮化物激光二极管（LD）中，可通过缩短p型层的生长时间和降低生长温度来改进器件设计。我们研究使用氧化锌（ZnO）替代氧化铟锡（ITO）作为半极性（202¯1）III族氮化物LD的顶部包层TCO。数值模拟表明，用ZnO替代ITO可降低TCO包层LD的内部损耗，这是因为ZnO的光吸收较低。在具有ZnO顶部包层的半极性（202¯1）III族氮化物LD中，实现了453 nm的激光发射，其阈值电流密度为8.6 kA/cm，阈值电压为10.3 V。
