Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany.
I. M. Frantsevich Institute for Problems of Material Science, NASU , Kiev-142, Ukraine.
Nano Lett. 2017 Sep 13;17(9):5446-5451. doi: 10.1021/acs.nanolett.7b02092. Epub 2017 Aug 18.
Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on SiN rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the SiN waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.
基于光子的完全集成量子技术是当前研究的焦点，因为它在性能和可扩展性方面具有巨大的潜力。理想情况下，单光子源、处理单元和光子探测器都集成在单个芯片上。在片上量子电路和片上单光子探测方面已经取得了令人瞩目的进展。相比之下，由于目前只有少数集成单光子源存在，因此通常将非经典光从外部耦合到光子芯片上。在这里，我们提出了在层状半导体硒化镓中的波导耦合单光子发射器作为有前途的片上光源。厚度低于 100nm 的 GaSe 晶体被放置在 SiN 脊或槽波导上，从而产生了一种改进的模式结构，有利于光耦合。使用 SiN 波导内的光学激发，我们发现了在光子芯片上路由的产生光子的非经典性。因此，我们的工作为集成量子技术提供了一种易于实现且稳健的光源。
