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来自异质GaAs/SiN量子光子电路中确定性集成单量子点的不可区分光子。

Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/SiN Quantum Photonic Circuits.

作者信息

Schnauber Peter, Singh Anshuman, Schall Johannes, Park Suk In, Song Jin Dong, Rodt Sven, Srinivasan Kartik, Reitzenstein Stephan, Davanco Marcelo

机构信息

Institute of Solid State Physics , Technische Universität Berlin , Berlin 10623 , Germany.

National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States.

出版信息

Nano Lett. 2019 Oct 9;19(10):7164-7172. doi: 10.1021/acs.nanolett.9b02758. Epub 2019 Sep 13.

Abstract

Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/SiN photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, SiN waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.

摘要

硅光子学通过允许创建连接各种功能性片上元件的广泛、低损耗、可重构网络,实现了量子光子系统的扩展。将单量子发射器集成到光子电路中,作为不可区分光子或单光子非线性的按需光源,可能会实现大规模的基于芯片的量子光子电路和网络。为此,我们使用低温原位电子束光刻技术,确定性地生产混合GaAs/SiN光子器件,该器件包含精确位于纳米光子结构内的单个InAs量子点,这些量子点作为高效的、与SiN波导耦合的片上按需单光子源。我们的可扩展制造方法所提供的精确定位,还允许观察后选择的不可区分光子。这表明了一条通往基于芯片的量子光子学显著扩展的有前景的路径,该扩展由直接在芯片上按需产生的大量不可区分单光子通量实现。

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