激光处理在溶液法制备的MOS-TFT有源层中的应用。

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method.

作者信息

Chen Nanhong, Ning Honglong, Liang Zhihao, Liu Xianzhe, Wang Xiaofeng, Yao Rihui, Zhong Jinyao, Fu Xiao, Qiu Tian, Peng Junbiao

机构信息

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China.

Research Center of Flexible Sensing Materials and Devices, School of Applied Physics and Materials, Wuyi University, Jiangmen 529020, China.

出版信息

Micromachines (Basel). 2021 Nov 30;12(12):1496. doi: 10.3390/mi12121496.

DOI:10.3390/mi12121496

PMID:34945352

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8704860/

Abstract

The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

摘要

通过溶液法制备的金属氧化物半导体薄膜晶体管（MOS-TFT）的有源层，具有成本低、制备工艺简单的优点，通常需要进行热处理以提高其性能。激光处理具有能量高、速度快、对衬底损伤小、处理区域可控等优点，比热处理更适合柔性和大规模卷对卷制备。本文主要介绍了激光处理溶液制备有源层薄膜的基本原理，包括激光对亚稳键的光化学裂解、激光热效应、光激活效应以及纳米颗粒的激光烧结。此外，还描述了激光处理在MOS-TFT性能调控方面的应用，包括激光能量密度、处理气氛、激光波长等因素对有源层薄膜和MOS-TFT器件性能的影响。最后，总结了激光处理技术在溶液法制备金属氧化物半导体薄膜及MOS-TFT应用中的问题和未来发展趋势。