A Novel and Facile Route to Synthesize Atomic-Layered MoS Film for Large-Area Electronics.

High-quality and large-area molybdenum disulfide (MoS ) thin film is highly desirable for applications in large-area electronics. However, there remains a challenge in attaining MoS film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few-layered MoS film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO) ) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS film is readily achievable in 20 min. Large-area MoS field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm V s , which is the highest reported for bottom-gated MoS -FETs fabricated via photolithography with an on/off ratio of ≈10 at room temperature.