Lim Sung Kwan, Kang Soo Cheol, Yoo Tae Jin, Lee Sang Kyung, Hwang Hyeon Jun, Lee Byoung Hun
Center for Emerging Electronic Devices and Systems (CEEDS), GIST, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, Korea.
Department of Nanobio Materials and Electronics, GIST, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, Korea.
Nanomaterials (Basel). 2018 Oct 7;8(10):797. doi: 10.3390/nano8100797.
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS₂/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 10⁷, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current.
本文研究了二硫化钼/黑磷（MoS₂/BP）异质结器件的电学特性和工作机制。尽管该器件显示出超过1×10⁷的高开/关比，亚阈值摆幅较低，约为54 mV/dec，关断电流水平为1fA，但其工作机制更接近结型场效应晶体管（FET）而非隧道FET。该器件的关断电流由BP层中的耗尽区控制，带间隧穿电流对快速开启和极低关断电流没有贡献。
