二硫化钼/黑磷异质结场效应晶体管的工作机制

Operation Mechanism of a MoS₂/BP Heterojunction FET.

作者信息

Lim Sung Kwan, Kang Soo Cheol, Yoo Tae Jin, Lee Sang Kyung, Hwang Hyeon Jun, Lee Byoung Hun

机构信息

Center for Emerging Electronic Devices and Systems (CEEDS), GIST, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, Korea.

Department of Nanobio Materials and Electronics, GIST, 123 Cheomdan-gwagiro, Buk-gu, Gwangju 61005, Korea.

出版信息

Nanomaterials (Basel). 2018 Oct 7;8(10):797. doi: 10.3390/nano8100797.

DOI:10.3390/nano8100797

PMID:30301261

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6215131/

Abstract

The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS₂/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 10⁷, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current.

摘要

本文研究了二硫化钼/黑磷（MoS₂/BP）异质结器件的电学特性和工作机制。尽管该器件显示出超过1×10⁷的高开/关比，亚阈值摆幅较低，约为54 mV/dec，关断电流水平为1fA，但其工作机制更接近结型场效应晶体管（FET）而非隧道FET。该器件的关断电流由BP层中的耗尽区控制，带间隧穿电流对快速开启和极低关断电流没有贡献。