Departement Chemie, KU Leuven , Celestijnenlaan 200F, B3001 Leuven, Belgium.
Interuniversitair Micro-Electronica Centrum (imec) vzw , Kapeldreef 75, B3001 Leuven, Belgium.
ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37484-37492. doi: 10.1021/acsami.7b12573. Epub 2017 Oct 11.
The key steps of a transfer of two-dimensional (2D) materials are the delamination of the as-grown material from a growth substrate and the lamination of the 2D material on a target substrate. In state-of-the-art transfer experiments, these steps remain very challenging, and transfer variations often result in unreliable 2D material properties. Here, it is demonstrated that interfacial water can insert between graphene and its growth substrate despite the hydrophobic behavior of graphene. It is understood that interfacial water is essential for an electrochemistry-based graphene delamination from a Pt surface. Additionally, the lamination of graphene to a target wafer is hindered by intercalation effects, which can even result in graphene delamination from the target wafer. For circumvention of these issues, a direct, support-free graphene transfer process is demonstrated, which relies on the formation of interfacial water between graphene and its growth surface, while avoiding water intercalation between graphene and the target wafer by using hydrophobic silane layers on the target wafer. The proposed direct graphene transfer also avoids polymer contamination (no temporary support layer) and eliminates the need for etching of the catalyst metal. Therefore, recycling of the growth template becomes feasible. The proposed transfer process might even open the door for the suggested atomic-scale interlocking-toy-brick-based stacking of different 2D materials, which will enable a more reliable fabrication of van der Waals heterostructure-based devices and applications.
二维(2D)材料转移的关键步骤是将生长衬底上的材料进行剥离以及将 2D 材料层压到目标衬底上。在最先进的转移实验中,这些步骤仍然极具挑战性,并且转移变化经常导致不可靠的 2D 材料性能。在这里,证明了尽管石墨烯具有疏水性,但界面水可以插入石墨烯与其生长衬底之间。据了解,界面水对于基于电化学的石墨烯从 Pt 表面剥离是必不可少的。此外,石墨烯层压到目标晶片会受到夹层效应的阻碍,甚至会导致石墨烯从目标晶片上剥离。为了解决这些问题,展示了一种直接、无支撑的石墨烯转移过程,该过程依赖于石墨烯与其生长表面之间形成界面水,同时通过在目标晶片上使用疏水性硅烷层来避免石墨烯与目标晶片之间的水夹层。所提出的直接石墨烯转移还避免了聚合物污染(无临时支撑层),并且不需要刻蚀催化剂金属。因此,生长模板的回收变得可行。所提出的转移过程甚至可能为基于原子级互锁玩具积木的不同 2D 材料的堆叠开辟道路,这将使基于范德华异质结构的器件和应用的更可靠制造成为可能。