Li Ludong, Lou Zheng, Shen Guozhen
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
ACS Appl Mater Interfaces. 2015 Oct 28;7(42):23507-14. doi: 10.1021/acsami.5b06070. Epub 2015 Oct 13.
Hierarchical CdS nanowires were synthesized via a facile vapor transport method, which were used to fabricate both rigid and flexible visible-light photodetectors. Studies found that the rigid photodetectors on SiO2/Si substrate showed ultrahigh photo-dark current ratio up to 1.96 × 10(4), several orders of magnitude higher than previously reported CdS nanostructures, as well as high specific detectivity (4.27 × 10(12) Jones), fast response speed and excellent environmental stability. Highly flexible photodetectors were also fabricated on polyimide substrate, which exhibited comparable photoresponse performance as the rigid one. In addition, the as-prepared flexible devices displayed excellent mechanical flexibility, electrical stability and folding endurance. The results indicate that the hierarchical CdS nanowires may be good candidates for nanoscale optoelectronic devices such as high-efficiency photoswitches and highly photosensitive detectors.
通过一种简便的气相传输方法合成了分级结构的硫化镉纳米线,并用其制备了刚性和柔性可见光光电探测器。研究发现,二氧化硅/硅衬底上的刚性光电探测器显示出高达1.96×10⁴的超高光暗电流比,比先前报道的硫化镉纳米结构高出几个数量级,同时还具有高比探测率(4.27×10¹²琼斯)、快速响应速度和出色的环境稳定性。在聚酰亚胺衬底上也制备了高度柔性的光电探测器,其表现出与刚性光电探测器相当的光响应性能。此外,所制备的柔性器件显示出优异的机械柔韧性、电稳定性和折叠耐久性。结果表明,分级结构的硫化镉纳米线可能是用于高效光开关和高灵敏度探测器等纳米级光电器件的良好候选材料。