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同构过渡金属二卤族化合物同素异形体中超快的层间电子转移

Ultrafast Interlayer Electron Transfer in Incommensurate Transition Metal Dichalcogenide Homobilayers.

机构信息

National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, Anhui 230029, China.

Department of Physics and Astronomy, The University of Kansas , Lawrence, Kansas 66045, United States.

出版信息

Nano Lett. 2017 Nov 8;17(11):6661-6666. doi: 10.1021/acs.nanolett.7b02608. Epub 2017 Oct 27.

Abstract

Two-dimensional materials, such as graphene, transition metal dichalcogenides, and phosphorene, can be used to construct van der Waals multilayer structures. This approach has shown potentials to produce new materials that combine novel properties of the participating individual layers. One key requirement for effectively harnessing emergent properties of these materials is electronic connection of the involved atomic layers through efficient interlayer charge or energy transfer. Recently, ultrafast charge transfer on a time scale shorter than 100 fs has been observed in several van der Waals bilayer heterostructures formed by two different materials. However, information on the transfer between two atomic layers of the same type is rare. Because these homobilayers are essential elements in constructing multilayer structures with desired optoelectronic properties, efficient interlayer transfer is highly desired. Here we show that electron transfer between two monolayers of MoSe occurs on a picosecond time scale. Even faster transfer was observed in homobilayers of WS and WSe. The samples were fabricated by manually stacking two exfoliated monolayer flakes. By adding a graphene layer as a fast carrier recombination channel for one of the two monolayers, the transfer of the photoexcited carriers from the populated to the drained monolayers was time-resolved by femtosecond transient absorption measurements. The observed efficient interlayer carrier transfer indicates that such homobilayers can be used in van der Waals multilayers to enhance their optical absorption without significantly compromising the interlayer transport performance. Our results also provide valuable information for understanding interlayer charge transfer in heterostructures.

摘要

二维材料,如石墨烯、过渡金属二卤化物和黑磷烯,可以用来构建范德华多层结构。这种方法显示出了产生新的材料的潜力,这些材料结合了参与的单个层的新颖特性。有效利用这些材料的新兴特性的一个关键要求是通过有效的层间电荷或能量转移来实现参与原子层的电子连接。最近,在由两种不同材料形成的几个范德华双层异质结构中,已经观察到了短于 100fs 的超快电荷转移。然而,关于相同类型的两个原子层之间的转移的信息很少。因为这些同层是构建具有所需光电特性的多层结构的基本元件,所以非常需要有效的层间转移。在这里,我们表明 MoSe 的两个单层之间的电子转移发生在皮秒时间尺度上。在 WS 和 WSe 的同层中观察到更快的转移。样品是通过手动堆叠两个剥离的单层薄片制成的。通过在其中一个单层中添加一个石墨烯层作为快速载流子复合通道,通过飞秒瞬态吸收测量来解析光激发载流子从填充层到耗尽层的转移。观察到的有效的层间载流子转移表明,这种同层可以用于范德华多层结构中,以增强它们的光吸收,而不会显著影响层间传输性能。我们的结果还为理解异质结构中的层间电荷转移提供了有价值的信息。

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