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晶圆级底部填充对超薄芯片堆叠型3D-IC组件在热循环测试期间微凸点可靠性的影响。

Effect of Wafer Level Underfill on the Microbump Reliability of Ultrathin-Chip Stacking Type 3D-IC Assembly during Thermal Cycling Tests.

作者信息

Lee Chang-Chun

机构信息

Department of Power Mechanical Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu 30013, Taiwan.

出版信息

Materials (Basel). 2017 Oct 24;10(10):1220. doi: 10.3390/ma10101220.

DOI:10.3390/ma10101220
PMID:29064435
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5667026/
Abstract

The microbump (μ-bump) reliability of 3D integrated circuit (3D-IC) packaging must be enhanced, in consideration of the multi-chip assembly, during temperature cycling tests (TCT). This research proposes vehicle fabrications, experimental implements, and a nonlinear finite element analysis to systematically investigate the assembled packaging architecture that stacks four thin chips through the wafer level underfill (WLUF) process. The assembly of μ-bump interconnects by daisy chain design shows good quality. Results of both TCT data and the simulation indicate that μ-bumps with residual SnAg solders can reach more than 1200 fatigue life cycles. Moreover, several important design factors in the present 3D-IC package influence μ-bump reliability. Analytical results show that the μ-bump's thermo-mechanical reliability can be improved by setting proper chip thickness, along with a WLUF that has a low elastic modulus and a small coefficient of thermal expansion.

摘要

考虑到多芯片组装，在温度循环测试（TCT）期间，必须提高三维集成电路（3D-IC）封装的微凸点（μ凸点）可靠性。本研究提出了载体制造、实验方法以及非线性有限元分析，以系统地研究通过晶圆级底部填充（WLUF）工艺堆叠四个薄芯片的组装封装架构。采用菊花链设计的μ凸点互连组装显示出良好的质量。TCT数据和模拟结果均表明，带有残余SnAg焊料的μ凸点可达到超过1200个疲劳寿命周期。此外，当前3D-IC封装中的几个重要设计因素会影响μ凸点的可靠性。分析结果表明，通过设置适当的芯片厚度，以及具有低弹性模量和小热膨胀系数的WLUF，可以提高μ凸点的热机械可靠性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/c27b63100352/materials-10-01220-g012.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/3bda3f8d988e/materials-10-01220-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/1a167d854125/materials-10-01220-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/2c18cd4b1f69/materials-10-01220-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/b6cd7b175fc5/materials-10-01220-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/9d1599daa3c2/materials-10-01220-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/97e65523508b/materials-10-01220-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/c27b63100352/materials-10-01220-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/0d10a951057c/materials-10-01220-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/4ce4ca1202a3/materials-10-01220-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/b504d695efe4/materials-10-01220-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/529465442df2/materials-10-01220-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/3d67c58920b7/materials-10-01220-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/3bda3f8d988e/materials-10-01220-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/1a167d854125/materials-10-01220-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/2c18cd4b1f69/materials-10-01220-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/b6cd7b175fc5/materials-10-01220-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/9d1599daa3c2/materials-10-01220-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/97e65523508b/materials-10-01220-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1d29/5667026/c27b63100352/materials-10-01220-g012.jpg

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