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范德瓦尔斯隧道场效应晶体管的气体分子传感。

Gas molecule sensing of van der Waals tunnel field effect transistors.

机构信息

Emerging Devices Research Group, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Korea.

出版信息

Nanoscale. 2017 Dec 7;9(47):18644-18650. doi: 10.1039/c7nr05712a.

Abstract

van der Waals (vdW) heterostructures with two-dimensional (2D) crystals such as graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDCs) allow us to demonstrate atomically thin field-effect transistors (FETs), photodetectors (PDs) and photovoltaic devices capable of higher performance and greater stability levels than conventional devices. Although there have been studies of gas molecule sensing with 2D crystal channels, vdW heterostructures based on 2D crystals have not been employed thus far. Here, utilizing graphene/WS/graphene (G/WS/G) vdW heterostructure tunnel FETs, we demonstrate the rectification behavior of the sensitivity signal by tuning the WS potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.

摘要

范德华 (vdW) 异质结构与二维 (2D) 晶体(如石墨烯、六方氮化硼 (hBN) 和过渡金属二卤化物 (TMDCs))相结合,使我们能够展示原子级薄的场效应晶体管 (FET)、光电探测器 (PD) 和光伏器件,这些器件的性能和稳定性水平都高于传统器件。尽管已经有关于二维晶体通道的气体分子传感研究,但迄今为止尚未使用基于二维晶体的 vdW 异质结构。在这里,我们利用石墨烯/WS/石墨烯 (G/WS/G) vdW 异质结构隧道 FET,通过调整 WS 势垒作为气体分子浓度的函数,展示了灵敏度信号的整流行为,并设计了一个对应于气体混合物中两种不同分子的单个比例的灵敏度变化的指纹图谱。因为在气体传感研究领域中,从气体混合物中分离不同的气体分子浓度的需求很高,所以这个结果将极大地有助于选择性气体传感的进展。

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