Millar R W, Gallacher K, Frigerio J, Ballabio A, Bashir A, MacLaren I, Isella G, Paul D J
Opt Express. 2016 Mar 7;24(5):4365-4374. doi: 10.1364/OE.24.004365.
Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present in circular cavities, which can detrimentally effect the carrier concentration for direct band transitions. The advantages and disadvantages of each type of proposed cavity structure are discussed.
在硅衬底上制备了锗基微盘、微环和跑道形腔，并使用氮化硅应力层对其施加应变。光致发光测量表明，发射波长≥2.3μm，通过拉曼光谱测量，应变最大的样品在平面内的拉伸应变>2%。微盘结构的应变分析表明，圆形腔中存在剪切应变，这可能对直接带隙跃迁的载流子浓度产生不利影响。文中讨论了每种提出的腔结构的优缺点。
