Moon Eunseong, Blaauw David, Phillips Jamie D
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109 USA.
IEEE Trans Electron Devices. 2017 Nov;64(11):4554-4560. doi: 10.1109/TED.2017.2746094. Epub 2017 Sep 6.
The design and characterization of mm-scale GaAs photovoltaic cells are presented and demonstrate highly efficient energy harvesting in the near infrared. Device performance is improved dramatically by optimization of the device structure for the near-infrared spectral region and improving surface and sidewall passivation with ammonium sulfide treatment and subsequent silicon nitride deposition. The power conversion efficiency of a 6.4 mm cell under 660 nW/mm NIR illumination at 850 nm is greater than 30 %, which is higher than commercial crystalline silicon solar cells under similar illumination conditions. Critical performance limiting factors of sub-mm scale GaAs photovoltaic cells are addressed and compared to theoretical calculations.
介绍了毫米级砷化镓光伏电池的设计与特性,其展示了在近红外区域高效的能量收集。通过针对近红外光谱区域优化器件结构,并采用硫化铵处理及随后的氮化硅沉积来改善表面和侧壁钝化,器件性能得到显著提升。一个6.4毫米的电池在850纳米波长、660纳瓦/平方毫米的近红外光照下,功率转换效率大于30%,这高于在类似光照条件下的商用晶体硅太阳能电池。文中讨论了亚毫米级砷化镓光伏电池关键的性能限制因素,并与理论计算结果进行了比较。