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实现范德华堆叠二维材料垂直生长的机理理解:多尺度模型与实验。

Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments.

机构信息

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China.

Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.

出版信息

ACS Nano. 2017 Dec 26;11(12):12780-12788. doi: 10.1021/acsnano.7b07604. Epub 2017 Dec 11.

DOI:10.1021/acsnano.7b07604
PMID:29206441
Abstract

Vertical stacking of monolayers via van der Waals (vdW) interaction opens promising routes toward engineering physical properties of two-dimensional (2D) materials and designing atomically thin devices. However, due to the lack of mechanistic understanding, challenges remain in the controlled fabrication of these structures via scalable methods such as chemical vapor deposition (CVD) onto substrates. In this paper, we develop a general multiscale model to describe the size evolution of 2D layers and predict the necessary growth conditions for vertical (initial + subsequent layers) versus in-plane lateral (monolayer) growth. An analytic thermodynamic criterion is established for subsequent layer growth that depends on the sizes of both layers, the vdW interaction energies, and the edge energy of 2D layers. Considering the time-dependent growth process, we find that temperature and adatom flux from vapor are the primary criteria affecting the self-assembled growth. The proposed model clearly demonstrates the distinct roles of thermodynamic and kinetic mechanisms governing the final structure. Our model agrees with experimental observations of various monolayer and bilayer transition metal dichalcogenides grown by CVD and provides a predictive framework to guide the fabrication of vertically stacked 2D materials.

摘要

通过范德华(vdW)相互作用实现单层的垂直堆叠为二维(2D)材料的物理性质工程和原子薄器件设计开辟了有前途的途径。然而,由于缺乏机械理解,通过诸如化学气相沉积(CVD)等可扩展方法在衬底上对这些结构进行受控制造仍然存在挑战。在本文中,我们开发了一个通用的多尺度模型来描述二维层的尺寸演化,并预测垂直(初始+后续层)与平面横向(单层)生长所需的生长条件。建立了一个用于后续层生长的分析热力学判据,该判据取决于两层的大小、vdW 相互作用能和二维层的边缘能。考虑到随时间变化的生长过程,我们发现温度和来自蒸汽的吸附原子通量是影响自组装生长的主要标准。所提出的模型清楚地表明了控制最终结构的热力学和动力学机制的不同作用。我们的模型与通过 CVD 生长的各种单层和双层过渡金属二卤化物的实验观察结果一致,并提供了一个预测框架来指导垂直堆叠的 2D 材料的制造。

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