Chen Buhang, Zeng Xiongzhi, Liu Zhetong, Dong Wenlong, Pei Ding, Wang Huan, Dong Yanyan, Wu Chengjin, Gao Xiaoyin, Xiao Hanbo, Gao Han, Jia Hang, Yuan Aiheng, Du Jinlong, Chen Heng, Liu Haiyang, Tan Congwei, Yin Jianbo, Liu Zhongkai, Liu Luqi, Gao Peng, Novoselov Kostya S, Peng Hailin, Li Zhenyu, Sun Luzhao, Liu Zhongfan
College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China.
Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, China.
Nat Commun. 2025 Jul 1;16(1):5490. doi: 10.1038/s41467-025-60323-1.
Compared with single-layer two-dimensional (2D) materials, bilayer, trilayer, and few-layer 2D materials exhibit enhanced band structure tunability, improved electrical and thermal properties, and superior mechanical strength and barrier performance. However, the layer-controlled synthesis of 2D films with high layer number uniformity remains challenging, due to the difficulty in the additional layer nucleation and the effective realization of layer-by-layer growth. Herein, we report an edge-feeding synchronous epitaxial growth mode breaking the limit of traditional epitaxy theories. An efficient heterogeneous Cu-CuO catalyst is demonstrated, where graphene edge-surrounding CuO is crucial in precursor dissociation, atomic carbon diffusion, and edge energy reduction. The synchronous growth method can be generalized to the layer-controlled synthesis of 2-7-layer graphene films. Relying on this growth strategy, we successfully achieved the industrial-scale production of homogeneous A3-sized ABA-trilayer graphene films (42 × 30 square centimeters) with good mechanical properties and peeling-transferring intactness. Our method offers a robust strategy for the layer-controlled synthesis of 2D material films.
与单层二维（2D）材料相比，双层、三层和少层2D材料表现出增强的能带结构可调性、改善的电学和热学性能，以及优异的机械强度和阻隔性能。然而，由于额外层成核困难以及有效实现逐层生长，具有高层数均匀性的2D薄膜的层控合成仍然具有挑战性。在此，我们报道了一种突破传统外延理论极限的边缘进料同步外延生长模式。展示了一种高效的异质Cu-CuO催化剂，其中石墨烯边缘包围的CuO在前体解离、原子碳扩散和边缘能量降低方面至关重要。这种同步生长方法可以推广到2-7层石墨烯薄膜的层控合成。依靠这种生长策略，我们成功实现了具有良好机械性能和完整剥离转移性能的A3尺寸ABA-三层石墨烯薄膜（42×30平方厘米）的工业规模生产。我们的方法为2D材料薄膜的层控合成提供了一种可靠的策略。
