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用于制造熔融石英微通道的快速等离子体蚀刻

Rapid Plasma Etching for Fabricating Fused Silica Microchannels.

作者信息

Morikawa Kyojiro, Matsushita Kazuki, Tsukahara Takehiko

机构信息

Department of Applied Chemistry, School of Engineering, The University of Tokyo.

Laboratory for Advanced Nuclear Energy, Institute of Innovative Research, Tokyo Institute of Technology.

出版信息

Anal Sci. 2017;33(12):1453-1456. doi: 10.2116/analsci.33.1453.

Abstract

In order to advance the performances of micro chemical and biochemical systems on a chip, the fabrication of microstructures such as channels and pillars is an essential basic technology. However, conventional fabrication methods based on wet etching have limitations in their applications for device engineering. In this study, we report on a new microchannel fabrication process on a fused silica substrate using photoresist and plasma etching based on CF, CHF, and Ar gases. Deep, rectangular microchannels, having vertical angles close to 90°, 10 μm-scale deep and low surface roughness of less than 1 nm, could be fabricated on a fused silica substrate at high etching rates on the order of 5 - 7 nm s. This metal-free fabrication methodology is expected to be a low-cost, easy, and simple technique for a fused silica microstructure applications.

摘要

为了提升芯片上微化学和生物化学系统的性能,诸如通道和柱体等微结构的制造是一项至关重要的基础技术。然而,基于湿法蚀刻的传统制造方法在器件工程应用中存在局限性。在本研究中,我们报告了一种在熔融石英基板上使用光刻胶以及基于CF、CHF和Ar气体的等离子体蚀刻的新型微通道制造工艺。可以在熔融石英基板上以5 - 7 nm/s量级的高蚀刻速率制造出深度为10μm量级、垂直角度接近90°且表面粗糙度小于1nm的深矩形微通道。这种无金属制造方法有望成为一种用于熔融石英微结构应用的低成本、简便且简易的技术。

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