Lee Hyeon-Jun, Abe Katsumi, Kim Jun Seo, Lee Myoung-Jae
Intelligent Devices & Systems Research Group, Institute of Convergence, DGIST, Daegu, 42988, Korea.
Global Center for Bio-Convergence Spin System, DGIST, Daegu, 42988, Korea.
Sci Rep. 2017 Dec 21;7(1):17963. doi: 10.1038/s41598-017-18420-9.
Defect generation in oxide semiconductor thin-film transistors under high-voltage driving has not been studied in depth despite being a crucial bottleneck in the making of the integrated circuit utilized in an oxide semiconductor. Here we report on the origin of the asymmetrical transport characteristics caused by the degradation in the oxide semiconductor during integrated circuit driving. The variation of the current profiles based on test conditions is related to the generation of local defect states in the oxide material; this generation could be caused by the structural change of the material. The numerical calculations show that the flow of the electron is blocked by the "electrical pocket" formed by the electric-field distortion due to the local defect states near the edge of the electrode.
尽管在氧化物半导体中使用的集成电路制造过程中，高压驱动下氧化物半导体薄膜晶体管中的缺陷产生是一个关键瓶颈，但尚未得到深入研究。在此，我们报告了集成电路驱动过程中氧化物半导体退化所导致的不对称传输特性的起源。基于测试条件的电流分布变化与氧化物材料中局部缺陷态的产生有关；这种产生可能是由材料的结构变化引起的。数值计算表明，电子流被电极边缘附近局部缺陷态导致的电场畸变所形成的“电阱”所阻挡。
