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引用本文的文献
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2
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本文引用的文献
1
Electroforming-Free Bipolar Resistive Switching Memory Based on Magnesium Fluoride.
Micromachines (Basel). 2021 Aug 30;12(9):1049. doi: 10.3390/mi12091049.
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Integration and Co-design of Memristive Devices and Algorithms for Artificial Intelligence.
iScience. 2020 Nov 17;23(12):101809. doi: 10.1016/j.isci.2020.101809. eCollection 2020 Dec 18.
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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.
Nanoscale Res Lett. 2020 Apr 22;15(1):90. doi: 10.1186/s11671-020-03299-9.
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Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
Materials (Basel). 2017 Dec 28;11(1):43. doi: 10.3390/ma11010043.
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Biodegradable resistive switching memory based on magnesium difluoride.
Nanoscale. 2016 Aug 11;8(32):15048-55. doi: 10.1039/c6nr03913h.
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Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices.
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Thermoelectric Seebeck effect in oxide-based resistive switching memory.
Nat Commun. 2014 Aug 20;5:4598. doi: 10.1038/ncomms5598.
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Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
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Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides.
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