Das Nayan C, Kim Minjae, Kwak Dong-Uk, Rani Jarnardhanan R, Hong Sung-Min, Jang Jae-Hyung
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea.
School of Energy Engineering, Korea Institute of Energy Technology, Naju 58330, Korea.
Nanomaterials (Basel). 2022 Feb 11;12(4):605. doi: 10.3390/nano12040605.
This study investigates switching characteristics of the magnesium fluoride (MgF)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition of the amorphous MgF active layer and Ti/MgF interface region, which affects the overall device performance. The experimental results indicate that filament type resistive switching takes place at the interface of Ti/MgF and trap-controlled space charge limited conduction (SCLC) mechanisms is dominant in both the low and high resistance states in the bulk MgF layer. RRAM device performances at different operating ambiances are also altered by MgF active layer treatments (air exposure and annealing). Devices show the better uniformity, stability, and a higher on/off current ratio in vacuum compared to an open-air environment. The Ti/MgF/Pt memory devices have great potential for future vacuum electronic applications.
本研究调查了基于氟化镁（MgF）的双极电阻式随机存取存储器（RRAM）器件在不同工作环境（露天和真空）下的开关特性。工作环境会改变非晶态MgF活性层和Ti/MgF界面区域的元素组成，这会影响器件的整体性能。实验结果表明，丝状电阻开关发生在Ti/MgF的界面处，并且在块状MgF层的低电阻和高电阻状态下，陷阱控制的空间电荷限制传导（SCLC）机制均占主导地位。不同工作环境下RRAM器件的性能也会因MgF活性层处理（空气暴露和退火）而改变。与露天环境相比，器件在真空中表现出更好的均匀性、稳定性和更高的开/关电流比。Ti/MgF/Pt存储器件在未来的真空电子应用中具有巨大潜力。
