Xie Siyi, Huang Junjie, Zhang Yufeng, Cai Weiwei, Zhang Xueao
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China.
Nanomaterials (Basel). 2021 May 12;11(5):1268. doi: 10.3390/nano11051268.
Although the structure of vertical graphene (VG) is important for various applications, the growth mechanism of VG is not yet fully clear. Here, the impacts of electrical conductivity of substrate on the morphology and structure of VG prepared by plasma-enhanced chemical vapor deposition are studied by scanning electron microscopy and Raman spectroscopy. The results show that VG with greater thickness can be grown on substrate with better electrical conductivity in the same growth time. Even though longer deposition time leads to more VG, more defects might develop in VG, especially at the position furthest away from the substrates. The change of morphology and structure of VG is closely correlated with strength of electric field near the substrate surface, which offers a new approach for orderly growing of VG. The discoveries not only shed light on the growth mechanism of VG, but also are beneficial for promoting the applications of VG.
尽管垂直石墨烯(VG)的结构对各种应用很重要,但其生长机制尚未完全明确。在此,通过扫描电子显微镜和拉曼光谱研究了衬底电导率对等离子体增强化学气相沉积制备的VG的形貌和结构的影响。结果表明,在相同生长时间内,电导率更好的衬底上可以生长出更厚的VG。尽管更长的沉积时间会导致更多的VG,但VG中可能会出现更多缺陷,尤其是在离衬底最远的位置。VG的形貌和结构变化与衬底表面附近电场强度密切相关,这为VG的有序生长提供了一种新方法。这些发现不仅阐明了VG的生长机制,也有利于推动VG的应用。