Du Qianqian, Ye Jiandong, Xu Zhonghua, Zhu Shunming, Tang Kun, Gu Shulin, Zheng Youdou
School of Electronic Science and Engineering and Collaborative Innovation Center of Solid State Lighting and Energy-saving Electronics, Nanjing University, Nanjing 210093, People's Republic of China.
Nanotechnology. 2018 Mar 16;29(11):115204. doi: 10.1088/1361-6528/aaa8b3.
Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environments and illumination conditions. These prominent properties have promising potential in nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behavior in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, light irradiation is of great importance on charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO. Carriers excited by light irradiation can dramatically promote trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path for creating a memory functionality to other low-dimensional material systems.
最近，氧化锌纳米线场效应晶体管（FETs）因其极低的维度以及对外部化学环境和光照条件的高灵敏度而再次受到关注。这些突出特性在纳米级化学和光传感器方面具有广阔的应用潜力。在本文中，我们制备了氧化锌纳米线场效应晶体管，并在其转移特性中发现了滞后行为。通过在有光照射和无光照射的情况下改变栅极偏置的扫描速率和范围，对滞后现象的机理和动力学进行了详细研究。值得注意的是，光照通过调节氧化锌/二氧化硅界面处氧的吸附和解吸对电荷俘获起着至关重要的作用。光照激发的载流子可以显著促进俘获/去俘获过程。在光照的辅助下，我们展示了一种采用氧化锌纳米线场效应晶体管的光子辅助非易失性存储器。该器件表现出可靠的编程/擦除操作以及较大的开/关比。因此，所提出的原型存储器为在其他低维材料系统中创建存储功能提供了一条可能的新途径。
