Ho Hsiang-Hsi, Lin Chun-Lung, Tsai Wei-Che, Hong Liang-Zheng, Lyu Cheng-Han, Hsu Hsun-Feng
Department of Materials Science and Engineering, National Chung Hsing University, 145 Xingda Rd, Taichung, 40227, Taiwan.
Nanoscale Res Lett. 2018 Jan 16;13(1):21. doi: 10.1186/s11671-017-2423-z.
We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.
我们展示了使用直流介电泳法制造和表征金属-纳米线-金属配置的硅纳米线基器件。发现这些器件的电流-电压特性具有整流性，并且由于在电学测量过程中发生的不对称焦耳热效应，其整流方向可由电压扫描方向确定。研究了整流器件的光电传感特性。结果表明，当整流器件处于反向偏置模式时，由于结界面处强大的内建电场，实现了优异的光响应。预计通过这种新颖且简便的方法制造的整流硅纳米线基器件可能会潜在地应用于其他领域，如逻辑门和传感器。
