Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States.
Nano Lett. 2010 Dec 8;10(12):5116-22. doi: 10.1021/nl103630c. Epub 2010 Nov 2.
We demonstrate orientation-controlled alignment of axially modulated pn SiNWs by applying dc electric fields across metal electrodes. The as-aligned pn SiNWs exhibit rectifying behaviors with a 97.7% yield, and about 35% of them exhibit no hysteresis in their current-voltage curves that can be directly used to construct AND/OR logic gates. Moreover, the as-aligned pn SiNWs can be packaged either with polydimethylsiloxane or additional metal layer to protect and even improve the quality of these NW diodes.
我们通过在金属电极上施加直流电场来实现轴向调制的 pn 硅纳米线的定向排列。所得到的定向排列的 pn 硅纳米线表现出整流行为，其产率高达 97.7%，其中约 35%的纳米线在电流-电压曲线上没有滞后，可直接用于构建与或非逻辑门。此外，定向排列的 pn 硅纳米线可以用聚二甲基硅氧烷或额外的金属层进行封装，以保护甚至改善这些 NW 二极管的质量。
