Liu Huixuan, Xun Damao
Department of Physics, Jiangxi Science and Technology Normal University, Nanchang, 330000, China.
J Nanosci Nanotechnol. 2018 Apr 1;18(4):2910-2913. doi: 10.1166/jnn.2018.14399.
We fabricated an H3PO4-incorporated chitosan proton conductor film that exhibited the electric double layer effect and showed a high specific capacitance of 4.42 μF/cm2. Transparent indium tin oxide thin-film transistors gated by H3PO4-incorporated chitosan films were fabricated by sputtering through a shadow mask. The operating voltage was as low as 1.2 V because of the high specific capacitance of the H3PO4-incorporated chitosan dielectrics. The junctionless transparent indium tin oxide thin film transistors exhibited good performance, including an estimated current on/off ratio and field-effect mobility of 1.2 × 106 and 6.63 cm2V-1s-1, respectively. These low-voltage thin-film electric-double-layer transistors gated by H3PO4-incorporated chitosan are promising for next generation battery-powered "see-through" portable sensors.
我们制备了一种掺入H3PO4的壳聚糖质子导体薄膜，该薄膜表现出双电层效应，且具有4.42 μF/cm2的高比电容。通过阴影掩膜溅射制备了由掺入H3PO4的壳聚糖薄膜栅控的透明氧化铟锡薄膜晶体管。由于掺入H3PO4的壳聚糖电介质的高比电容，其工作电压低至1.2V。无结透明氧化铟锡薄膜晶体管表现出良好的性能，包括估计的电流开/关比和场效应迁移率，分别为1.2×106和6.63 cm2V-1s-1。这些由掺入H3PO4的壳聚糖栅控的低电压薄膜双电层晶体管有望用于下一代电池供电的“透明”便携式传感器。
