Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences , Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering , Tianjin 300072 , China.
ACS Appl Mater Interfaces. 2018 Aug 8;10(31):25871-25877. doi: 10.1021/acsami.7b16658. Epub 2018 Mar 6.
Anodization is a promising technique to form high- k dielectrics for low-power organic field-effect transistor (OFET) applications. However, the surface quality of the dielectric, which is mainly inherited from the metal electrode, can be improved further than other fabrication techniques, such as sol-gel. In this study, we applied the template stripping method to fabricate a low-power single-crystalline OFET based on the anodized AlO dielectric. We found that the template stripping method largely improves the surface roughness of the deposited Al and allows for the formation of a high-quality AlO high- k dielectric by anodization. The ultraflat AlO /SAM dielectric combined with a single-crystal 2,6-diphenylanthracene (DPA) semiconductor produced a nearly defect-free interface with a steep subthreshold swing (SS) of 66 mV/decade. The current device is a promising candidate for future ultralow-power applications. Other than metal deposition, template stripping could provide a general approach to improve thin-film quality for many other types of materials and processes.
阳极氧化是一种很有前途的技术，可以形成高介电常数的介质，用于低功耗有机场效应晶体管（OFET）应用。然而，介电质的表面质量主要继承自金属电极，可以通过其他制造技术进一步改善，例如溶胶-凝胶法。在这项研究中，我们应用模板剥离法在阳极氧化 AlO 介电质上制造低功耗单晶 OFET。我们发现，模板剥离法大大改善了沉积 Al 的表面粗糙度，并允许通过阳极氧化形成高质量的 AlO 高介电常数介质。超平整的 AlO/SAM 介电质与单晶 2,6-二苯基蒽（DPA）半导体结合，产生了几乎无缺陷的界面，亚阈值摆幅（SS）陡峭为 66 mV/decade。目前的器件是未来超低功耗应用的有前途的候选者。除了金属沉积之外，模板剥离还可以为许多其他类型的材料和工艺提供一种通用的方法来改善薄膜质量。
