Kim Chaeeun, Park Jun-Cheol, Choi Sun Young, Kim Yonghun, Seo Seung-Young, Park Tae-Eon, Kwon Se-Hun, Cho Byungjin, Ahn Ji-Hoon
Department of Electronic Material Engineering, Korea Maritime and Ocean University, 727 Taejong-ro, Yeongdo-gu, Busan, 49112, Republic of Korea.
Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Material Science (KIMS), 797 Changwondaero, Sungsan-Gu, Gyongnam, 51508, Republic of Korea.
Small. 2018 Apr;14(15):e1704116. doi: 10.1002/smll.201704116. Epub 2018 Mar 9.
2D layered materials with sensitive surfaces are promising materials for use in chemical sensing devices, owing to their extremely large surface-to-volume ratios. However, most chemical sensors based on 2D materials are used in the form of laterally defined active channels, in which the active area is limited to the actual device dimensions. Therefore, a novel approach for fabricating self-formed active-channel devices is proposed based on 2D semiconductor materials with very large surface areas, and their potential gas sensing ability is examined. First, the vertical growth phenomenon of SnS nanocrystals is investigated with large surface area via metal-assisted growth using prepatterned metal electrodes, and then self-formed active-channel devices are suggested without additional pattering through the selective synthesis of SnS nanosheets on prepatterned metal electrodes. The self-formed active-channel device exhibits extremely high response values (>2000% at 10 ppm) for NO along with excellent NO selectivity. Moreover, the NO gas response of the gas sensing device with vertically self-formed SnS nanosheets is more than two orders of magnitude higher than that of a similar exfoliated SnS -based device. These results indicate that the facile device fabrication method would be applicable to various systems in which surface area plays an important role.
具有敏感表面的二维层状材料因其极大的表面积与体积比,是用于化学传感设备的有前景的材料。然而,大多数基于二维材料的化学传感器以横向定义的有源通道形式使用,其中有源区域限于实际器件尺寸。因此,基于具有非常大表面积的二维半导体材料,提出了一种制造自形成有源通道器件的新方法,并研究了其潜在的气敏能力。首先,通过使用预图案化金属电极的金属辅助生长,研究了具有大表面积的SnS纳米晶体的垂直生长现象,然后通过在预图案化金属电极上选择性合成SnS纳米片,提出了无需额外图案化的自形成有源通道器件。该自形成有源通道器件对NO表现出极高的响应值(10 ppm时>2000%)以及优异的NO选择性。此外,具有垂直自形成SnS纳米片的气敏器件的NO气体响应比类似的基于剥离SnS的器件高两个多数量级。这些结果表明,这种简便的器件制造方法将适用于表面积起重要作用的各种系统。