Ng Zi-Neng, Chan Kah-Yoong, Sin Yew-Keong, Yam Fong-Kwong, Knipp Dietmar
J Nanosci Nanotechnol. 2017 Jan;17(1):348-53. doi: 10.1166/jnn.2017.12477.
Aluminium–gallium (Al–Ga) co-doped ZnO (AGZO) thin films with different Al–Ga at.% were spin coated on glass substrates using sol–gel spin coating technique. Morphological images by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) reveal that the granular structures of co-doped films are embedded with microrods, which has never been reported before. The density of the microrods increases with higher co-doping at.%. The Hall Transport measurements reveal that the electrical properties of the co-doped films are comparable with single Ga doped ZnO films, which implies that the co-doping method can be a way forward to reduce the fabrication cost of the doped ZnO films involving expensive raw material. Also, the unique features of the AGZO films embedded with microrods may create new opportunity for these films to be implemented in emerging optoelectronic devices such as solar cells and organic light emitting diodes.
采用溶胶-凝胶旋涂技术，将不同铝镓原子百分比的铝镓共掺杂氧化锌（AGZO）薄膜旋涂在玻璃基板上。通过原子力显微镜（AFM）和场发射扫描电子显微镜（FESEM）获得的形态图像显示，共掺杂薄膜的颗粒结构中嵌入了微棒，这在此前从未有过报道。微棒的密度随着共掺杂原子百分比的增加而增大。霍尔输运测量结果表明，共掺杂薄膜的电学性能与单镓掺杂氧化锌薄膜相当，这意味着共掺杂方法可能是一种降低涉及昂贵原材料的掺杂氧化锌薄膜制造成本的途径。此外，嵌入微棒的AGZO薄膜的独特特性可能为这些薄膜在太阳能电池和有机发光二极管等新兴光电器件中的应用创造新机会。
