Hu Huiping, Wang Yuechu, Fu Chenguang, Zhao Xinbing, Zhu Tiejun
State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Innovation (Camb). 2022 Oct 18;3(6):100341. doi: 10.1016/j.xinn.2022.100341. eCollection 2022 Nov 8.
Inorganic semiconductor AgTe S has been recently found to exhibit unexpected plastic deformation with compressive strain up to 30%. However, the origin of the abnormal plasticity and how to simultaneously achieve superb ductility and high mobility are still elusive. Here, we demonstrate that crystalline/amorphous AgTe S ( = 0.3, 0.4, and 0.5) composites can exhibit excellent compressive strain up to 70% if the monoclinic AgTe phase, which commonly exists in the matrix, is eliminated. Significantly, an ultra-high tensile elongation reaching 107.3% was found in AgTeS, which is the highest one yet reported in the system and even surpasses those achieved in some metals and high-entropy alloys. Moreover, high mobility of above 1000 cm V s at room temperature and good thermoelectric performance are simultaneously maintained. A modified Ashby plot with ductility factor versus carrier mobility is thereby proposed to highlight the potential of solid materials for applications in flexible/wearable electronics.
最近发现无机半导体AgTeS在高达30%的压缩应变下表现出意想不到的塑性变形。然而，异常塑性的起源以及如何同时实现卓越的延展性和高迁移率仍然不清楚。在这里，我们证明，如果消除通常存在于基体中的单斜晶AgTe相，结晶/非晶AgTeS（x = 0.3、0.4和0.5）复合材料可以表现出高达70%的优异压缩应变。值得注意的是，在AgTeS中发现了高达107.3%的超高拉伸伸长率，这是该体系中迄今报道的最高值，甚至超过了一些金属和高熵合金所达到的伸长率。此外，在室温下同时保持了高于1000 cm²V⁻¹s⁻¹的高迁移率和良好的热电性能。因此，提出了一种具有延展性因子与载流子迁移率关系的修正阿什比图，以突出固体材料在柔性/可穿戴电子器件中的应用潜力。
