Song Yanling, Wu Qiyuan, Jia Caihong, Gao Zhaomeng, Zhang Weifeng
Henan Key Laboratory of Photovoltaic Materials, Center for Topological Functional Materials, Henan University Kaifeng 475004 People's Republic of China
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China.
RSC Adv. 2022 May 25;12(25):15814-15821. doi: 10.1039/d2ra01156e. eCollection 2022 May 23.
BiFeO (BFO), BiGdFeO (BGFO) and BiGdFeNiO (BGFNO) films are epitaxially grown on 0.7 wt% Nb-SrTiO (NSTO) substrates. The strong ferroelectric property in BGFNO film is confirmed by piezoresponse force microscopy (PFM) and polarization voltage (-) measurement. It is also found that the Au/BGFNO/NSTO devices possess a ferroelectric resistance switching (RS) effect. Gd- and Ni-codoped BiFeO is found to strongly enhance the resistance on/off ratio. A resistance on/off ratio as large as 3 × 10 is achieved with an applied pulse voltage of -8 V and +4 V. In addition, the devices exhibit excellent retention and anti-fatigue characteristics. The memristor behavior of Au/BGFNO/NSTO is attributed to the switching of polarization states, which modulate the width and height of the barrier at the BGFNO/NSTO interface. The excellent resistive switching properties in Au/BGFNO/NSTO devices indicate the promising application in nonvolatile memory.
BiFeO（BFO）、BiGdFeO（BGFO）和BiGdFeNiO（BGFNO）薄膜在0.7 wt% Nb-SrTiO（NSTO）衬底上外延生长。通过压电响应力显微镜（PFM）和极化电压（-）测量证实了BGFNO薄膜具有强铁电性能。还发现Au/BGFNO/NSTO器件具有铁电电阻开关（RS）效应。发现Gd和Ni共掺杂的BiFeO能显著提高电阻开/关比。在施加-8 V和+4 V的脉冲电压时，实现了高达3×10的电阻开/关比。此外，这些器件表现出优异的保持特性和抗疲劳特性。Au/BGFNO/NSTO的忆阻器行为归因于极化状态的切换，这调节了BGFNO/NSTO界面处势垒的宽度和高度。Au/BGFNO/NSTO器件优异的电阻开关特性表明其在非易失性存储器中有广阔的应用前景。
