Shi Xinying, Posysaev Sergei, Huttula Marko, Pankratov Vladimir, Hoszowska Joanna, Dousse Jean-Claude, Zeeshan Faisal, Niu Yuran, Zakharov Alexei, Li Taohai, Miroshnichenko Olga, Zhang Meng, Wang Xiao, Huang Zhongjia, Saukko Sami, González Diego López, van Dijken Sebastiaan, Alatalo Matti, Cao Wei
Nano and Molecular Systems Research Unit, University of Oulu, P.O. Box 3000, FI-90014, Oulu, Finland.
Department of Physics, University of Fribourg, Ch. du Musée 3, CH-1700, Fribourg, Switzerland.
Small. 2018 May;14(22):e1704526. doi: 10.1002/smll.201704526. Epub 2018 Apr 24.
A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS complexes. The intrinsic semiconducting property of MoS remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first-principles calculations. Following the system's band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor-metal heterojunctions enhance the photocatalytic ability.
基于无机层状晶体的电子产品的一个关键因素源于半导体晶体与电路中金属对应物之间的电接触模式。在此，通过纳米复合材料修饰实施了一种材料定制策略，以实现MoS基体与过渡金属纳米颗粒之间的金属接触。镍纳米颗粒（NiNPs）通过金纳米缓冲层成功连接到层状MoS晶体的侧面，形成半导体和磁性的NiNPs@MoS复合物。MoS的本征半导体性质保持不变，并且可以降低到仅几层。通过基于同步辐射的光发射电子显微镜验证了Ni与MoS主体的化学键合，并通过第一性原理计算进一步证明。根据系统的能带排列，金属与半导体侧之间新的电子迁移通道有助于金属接触机制，而半导体 - 金属异质结增强了光催化能力。
