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探测取向排列的单壁碳纳米管掺杂超薄二硫化钼的光响应

Probing photoresponse of aligned single-walled carbon nanotube doped ultrathin MoS.

作者信息

Wang Rui, Wang Tianjiao, Hong Tu, Xu Ya-Qiong

机构信息

Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, United States of America.

出版信息

Nanotechnology. 2018 Aug 24;29(34):345205. doi: 10.1088/1361-6528/aaca69. Epub 2018 Jun 5.

Abstract

We report a facile method to produce ultrathin molybdenum disulfide (MoS) hybrids with polarized near-infrared (NIR) photoresponses, in which horizontally-aligned single-walled carbon nanotubes (SWNTs) are integrated with single- and few-layer MoS through a two-step chemical vapor deposition process. The photocurrent generation mechanisms in SWNT-MoS hybrids are systematically investigated through wavelength- and polarization-dependent scanning photocurrent measurements. When the incident photon energy is above the direct bandgap of MoS, isotropic photocurrent signals are observed, which can be primarily attributed to the direct bandgap transition in MoS. In contrast, if the incident photon energy in the NIR region is below the direct bandgap of MoS, the maximum photocurrent response occurs when the incident light is polarized in the direction along the SWNTs, indicating that photocurrent signals mainly result from the anisotropic absorption of SWNTs. More importantly, these two-dimensional (2D) hybrid structures inherit the electrical transport properties from MoS, displaying n-type characteristics at a zero gate voltage. These fundamental studies provide a new way to produce ultrathin MoS hybrids with inherited electrical properties and polarized NIR photoresponses, opening doors for engineering various 2D hybrid materials for future broadband optoelectronic applications.

摘要

我们报道了一种制备具有偏振近红外(NIR)光响应的超薄二硫化钼(MoS)杂化物的简便方法,其中通过两步化学气相沉积工艺将水平排列的单壁碳纳米管(SWNTs)与单层和少层MoS集成在一起。通过波长和偏振相关的扫描光电流测量系统地研究了SWNT-MoS杂化物中的光电流产生机制。当入射光子能量高于MoS的直接带隙时,观察到各向同性的光电流信号,这主要归因于MoS中的直接带隙跃迁。相反,如果近红外区域的入射光子能量低于MoS的直接带隙,则当入射光沿SWNTs方向偏振时会出现最大光电流响应,表明光电流信号主要来自SWNTs的各向异性吸收。更重要的是,这些二维(2D)杂化结构继承了MoS的电输运特性,在零栅极电压下呈现n型特性。这些基础研究为制备具有继承电性能和偏振近红外光响应的超薄MoS杂化物提供了一种新方法,为未来宽带光电子应用中各种二维杂化材料的工程化打开了大门。

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