Martínez Isidoro, Tiusan Coriolan, Hehn Michel, Chshiev Mairbek, Aliev Farkhad G
Dpto. Fisica de la Materia Condensada, IFIMAC and INC, Universidad Autonoma de Madrid, 28049, Madrid, Spain.
Center of Superconductivity, Spintronics and Surface Science (C4S), Technical University of Cluj-Napoca, Cluj-Napoca, 400114, Romania.
Sci Rep. 2018 Jun 21;8(1):9463. doi: 10.1038/s41598-018-27720-7.
The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation transition from the in-plane to the perpendicular (out of plane) state at temperatures below 50 K. The samples were 10 nm thick Fe in MgO/Fe(100)/MgO as stacking components of V/MgO/Fe/MgO/Fe/Co double barrier MTJs with an area of 20 × 20 μm. Micromagnetic simulations with PMA and different second order anisotropies at the opposite Fe/MgO interfaces qualitatively reproduce the observed broken symmetry spin reorientation transition. Our findings open the possibilities to develop multistate epitaxial spintronics based on competing magnetic anisotropies.
氧化镁/铁界面处垂直磁各向异性（PMA）的发现推动了基于超薄铁磁层的自旋电子器件的发展。然而，在具有相互竞争的PMA和面内各向异性的标准磁隧道结（MTJ）中，磁化翻转仍不清楚。在此，我们报道了在低于50 K的温度下，由磁场诱导的非易失性对称破缺磁化重新取向转变，即从面内状态转变为垂直（面外）状态。样品是氧化镁/铁（100）/氧化镁中10纳米厚的铁，作为面积为20×20微米的V/氧化镁/铁/氧化镁/铁/钴双势垒MTJ的堆叠组件。在相反的铁/氧化镁界面处具有PMA和不同二阶各向异性的微磁模拟定性地再现了观察到的对称破缺自旋重新取向转变。我们的发现为基于相互竞争的磁各向异性开发多态外延自旋电子学开辟了可能性。
