Al-Bustami H, Khaldi S, Shoseyov O, Yochelis S, Killi K, Berg I, Gross E, Paltiel Y, Yerushalmi R
Applied Physics Department and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Edmond J. Safra Campus, Jerusalem 91904, Israel.
Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Edmond J. Safra Campus, Givat Ram Jerusalem 91904, Israel.
Nano Lett. 2022 Jun 22;22(12):5022-5028. doi: 10.1021/acs.nanolett.2c01953. Epub 2022 Jun 9.
Spin electronics is delivering a much desired combination of properties such as high speed, low power, and high device densities for the next generation of memory devices. Utilizing chiral-induced spin selectivity (CISS) effect is a promising path toward efficient and simple spintronic devices. To be compatible with state-of-the-art integrated circuits manufacturing methodologies, vapor phase methodologies for deposition of spin filtering layers are needed. Here, we present vapor phase deposition of hybrid organic-inorganic thin films with embedded chirality. The deposition scheme relies on a combination of atomic and molecular layer deposition (A/MLD) utilizing enantiomeric pure alaninol molecular precursors combined with trimethyl aluminum (TMA) and water. The A/MLD deposition method deliver highly conformal thin films allowing the fabrication of several types of nanometric scale spintronic devices. The devices showed high spin polarization (close to 100%) for 5 nm thick spin filter layer deposited by A/MLD. The procedure is compatible with common device processing methodologies.
自旋电子学正在为下一代存储设备提供诸如高速、低功耗和高器件密度等备受期待的特性组合。利用手性诱导自旋选择性（CISS）效应是实现高效且简单的自旋电子器件的一条有前景的途径。为了与最先进的集成电路制造方法兼容，需要用于沉积自旋过滤层的气相方法。在此，我们展示了具有手性嵌入的有机 - 无机混合薄膜的气相沉积。沉积方案依赖于利用对映体纯的丙氨醇分子前驱体与三甲基铝（TMA）和水相结合的原子层和分子层沉积（A/MLD）。A/MLD沉积方法可提供高度 conformal 的薄膜，从而能够制造几种类型的纳米级自旋电子器件。对于通过A/MLD沉积的5纳米厚自旋过滤层，器件显示出高自旋极化（接近100%）。该工艺与常见的器件加工方法兼容。
