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利用同步辐射光电子衍射对SiC(0001)上双层石墨烯进行结构测定。

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction.

作者信息

Razado-Colambo I, Avila J, Vignaud D, Godey S, Wallart X, Woodruff D P, Asensio M C

机构信息

Synchrotron SOLEIL & Université Paris-Saclay, 91192, L'Orme des Merisiers, Saint Aubin-BP 48, Gif sur Yvette Cedex, France.

Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños, Laguna, 4031, Philippines.

出版信息

Sci Rep. 2018 Jul 5;8(1):10190. doi: 10.1038/s41598-018-28402-0.

DOI:10.1038/s41598-018-28402-0
PMID:29976962
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6033894/
Abstract

In recent years there has been growing interest in the electronic properties of 'few layer' graphene films. Twisted layers, different stacking and register with the substrate result in remarkable unconventional couplings. These distinctive electronic behaviours have been attributed to structural differences, even if only a few structural determinations are available. Here we report the results of a structural study of bilayer graphene on the Si-terminated SiC(0001) surface, investigated using synchrotron radiation-based photoelectron diffraction and complemented by angle-resolved photoemission mapping of the electronic valence bands. Photoelectron diffraction angular distributions of the graphene C 1s component have been measured at different kinetic energies and compared with the results of multiple scattering simulations for model structures. The results confirm that bilayer graphene on SiC(0001) has a layer spacing of 3.48 Å and an AB (Bernal) stacking, with a distance between the C buffer layer and the first graphene layer of 3.24 Å. Our work generalises the use of a versatile and precise diffraction method capable to shed light on the structure of low-dimensional materials.

摘要

近年来，人们对“少层”石墨烯薄膜的电子特性越来越感兴趣。扭曲的层、不同的堆叠方式以及与衬底的配准会导致显著的非常规耦合。这些独特的电子行为被归因于结构差异，尽管目前仅有少量的结构测定结果。在此，我们报告了在Si终止的SiC(0001)表面上双层石墨烯的结构研究结果，该研究使用基于同步辐射的光电子衍射进行，并通过电子价带的角分辨光发射映射进行补充。已在不同动能下测量了石墨烯C 1s组分的光电子衍射角分布，并与模型结构的多重散射模拟结果进行了比较。结果证实，SiC(0001)上的双层石墨烯具有3.48 Å的层间距和AB（伯纳尔）堆叠，C缓冲层与第一层石墨烯层之间的距离为3.24 Å。我们的工作推广了一种通用且精确的衍射方法的应用，该方法能够揭示低维材料的结构。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/9a9c37b8d597/41598_2018_28402_Fig10_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/0520f1df622e/41598_2018_28402_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/abe9e41c8ab0/41598_2018_28402_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/30ff5ed67f25/41598_2018_28402_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/86b59f1194bb/41598_2018_28402_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/8973e0c59dfb/41598_2018_28402_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/9a9c37b8d597/41598_2018_28402_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/0773ba1540ef/41598_2018_28402_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/aee3ea8fb07e/41598_2018_28402_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/fbb367223bd3/41598_2018_28402_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/873407d5e1dd/41598_2018_28402_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/0520f1df622e/41598_2018_28402_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/abe9e41c8ab0/41598_2018_28402_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/30ff5ed67f25/41598_2018_28402_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/86b59f1194bb/41598_2018_28402_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/8973e0c59dfb/41598_2018_28402_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae2d/6033894/9a9c37b8d597/41598_2018_28402_Fig10_HTML.jpg

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