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碳化硅上石墨烯的从头算研究。

Ab initio study of graphene on SiC.

作者信息

Mattausch Alexander, Pankratov Oleg

机构信息

Theoretische Festkörperphysik, Universität Erlangen-Nürnberg, Staudtstrasse 7, 91058 Erlangen, Germany.

出版信息

Phys Rev Lett. 2007 Aug 17;99(7):076802. doi: 10.1103/PhysRevLett.99.076802. Epub 2007 Aug 15.

Abstract

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast with earlier assumptions, the first carbon layer is covalently bonded to the substrate and cannot be responsible for the graphene-type electronic spectrum observed experimentally. The characteristic spectrum of freestanding graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C face it is semiconducting or semimetallic for single or double graphene coverage, respectively.

摘要

我们利用密度泛函计算方法研究了硅端和碳端1x1-6H-SiC表面上的单层和双层石墨烯。我们发现,与早期的假设相反,第一层碳层与衬底形成共价键,不可能是实验中观察到的石墨烯型电子能谱的来源。独立石墨烯的特征能谱在第二层碳层出现时显现,该层与下层结构呈现较弱的范德华键合。对于硅端衬底,界面是金属性的,而在碳面上,单层或双层石墨烯覆盖时分别为半导体性或半金属性。

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