热压铋掺杂n型多晶SnSe的热电性能

Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe.

作者信息

Nguyen Van Quang, Nguyen Thi Huong, Duong Van Thiet, Lee Ji Eun, Park Su-Dong, Song Jae Yong, Park Hyun-Min, Duong Anh Tuan, Cho Sunglae

机构信息

Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of Korea.

Thermoelectric Conversion Research Center, Creative and Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon, 51543, Republic of Korea.

出版信息

Nanoscale Res Lett. 2018 Jul 6;13(1):200. doi: 10.1186/s11671-018-2500-y.

DOI:10.1186/s11671-018-2500-y

PMID:29980879

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6035122/

Abstract

UNLABELLED

ᅟ: We report on the successful preparation of Bi-doped n-type polycrystalline SnSe by hot-press method. We observed anisotropic transport properties due to the (h00) preferred orientation of grains along the pressing direction. The electrical conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 12.85 and 6.46 S cm at 773 K for SnSe:Bi 8% sample, respectively, while thermal conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 0.81 and 0.60 W m K at 773 K for SnSe:Bi 8% sample, respectively. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition, whose transition temperature increases with Bi concentration. Our work addressed a possibility to dope polycrystalline SnSe by a hot-pressing process, which may be applied to module applications.

HIGHLIGHTS

We have successfully achieved Bi-doped n-type polycrystalline SnSe by the hot-press method. 2. We observed anisotropic transport properties due to the [h00] preferred orientation of grains along pressing direction. 3. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition.

摘要

未标注

我们报道了通过热压法成功制备铋掺杂的n型多晶SnSe。由于晶粒沿压制方向的（h00）择优取向，我们观察到了各向异性的输运特性。对于8%Bi掺杂的SnSe样品，在773K时，垂直于压制方向的电导率高于平行于压制方向的电导率，分别为12.85和6.46 S/cm，而垂直于压制方向的热导率高于平行于压制方向的热导率，在773K时，8%Bi掺杂的SnSe样品分别为0.81和0.60 W/(m·K)。我们在样品中观察到一种双极传导机制，导致从n型到p型的转变，其转变温度随铋浓度的增加而升高。我们的工作提出了通过热压工艺对多晶SnSe进行掺杂的可能性，这可能应用于模块应用。