Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Republic of Korea.
Nat Commun. 2016 Dec 12;7:13713. doi: 10.1038/ncomms13713.
Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 × 10 cm at 773 K.
最近,层状的硒化锡(SnSe)因其出色的 p 型热电性能而备受关注,在 923K 时展现出了显著的 ZT 值为 2.6。对于热电设备应用,需要具有可比 ZT 值的 n 型材料。在这里,我们报告了通过在 Sn 位取代 Bi 成功合成了 n 型 SnSe 单晶。此外,我们发现载流子浓度随 Bi 含量的增加而增加,这对 n 型 SnSe 单晶的热电性能有很大影响。实际上,我们在 773K 时获得了最高的 ZT 值 2.2,这是在最掺杂的 n 型 SnSe 中沿 b 轴实现的,其载流子密度在 733K 时为-2.1×10cm。